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infineon technologies 1 9.01 hys 72vx2xxgr pc100 registered sdram-modules 3.3 v 168-pin registered pc100 sdram modules 64 mb, 128 mb, 256 mb, 512 mb & 1 gb densities the hys 72vx2x0gr family are industry standard 168-pin 8-byte dual in-line memory modules (dimms) which are organized as 8m 72, 16m 72, 32m 72, 64m 72 & 128m 72 high speed memory arrays designed with synchronous drams (sdrams) for ecc applications. the 32m x 72 (256mbyte) registered dimm module is available in two versions (12 or 13 row addresses). all control and address signals are registered on-dimm and the design incorporates a pll circuit for the clock inputs. use of an on-board register reduces capacitive loading on the input signals but are delayed by one cycle in arriving at the sdram devices. decoupling capacitors are mounted on the pc board. the dimms use a serial presence detects scheme implemented via a serial e 2 prom using the 2-pin i 2 c protocol. the first 128 bytes are utilized by the dimm manufacturer and the second 128 bytes are available to the end user. all infineon 168-pin dimms provide a high performance, flexible 8-byte interface in a 133.35 mm long footprint. ? 168-pin jedec standard, registered 8 byte dual-in-line sdram module for pc and server main memory applications one bank 8m 72, 16m 72, 32m 72 and 64m 72 organization, two bank 128m 72 organization optimized for ecc applications with very low input capacitances programmed latencies: single + 3.3 v ( 0.3 v) power supply programmable cas latency, burst length, and wrap sequence (sequential & interleave) auto refresh (cbr) and self refresh all inputs and outputs are lvttl compatible serial presence detect with e 2 prom utilizes sdrams in tsopii-54 packages with registers and pll. the two bank module uses stacked tsop54 packages. card size: 133.35 mm 38.1 mm/43.18 mm with gold contact pads (jedec mo-161) this specification follows intel?s ?pc sdram registered dimm specification? rev. 1.2 product speed cl t rcd t rp -8 pc100 2 2 2 performance: -8 unit pc100 f ck clock frequency (max.) 100 mhz t ck clock cycle time (min.) 10 ns t ac clock access time (min.) 6 ns
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 2 9.01 note: all part numbers end with a place code (not shown), designating the die revision. consult factory for current revision. example: hys 64v8200gr-8-c2, indicating rev. c2 dies are used for sdram components. ordering information type compliance code description sdram technology hys 72v8200gr-8-c hys 72v8200gr-8-e pc100-222-622r one bank 64 mb reg. dimm 64 mbit (x8) hys 72v16200gr-8-c hys 72v16200gr-8-e pc100-222-622r one bank 128 mb reg. dimm 64 mbit (x4) hys 72v16201gr-8-c2 pc100-222-622r one bank 128 mb reg. dimm 128 mbit (x8) hys 72v32201gr-8-c2 pc100-222-622r one bank 256 mb reg. dimm 128 mbit (x4) hys 72v32200gr-8-c2 pc100-222-622r one bank 256 mb reg. dimm 256 mbit (x8) hys 72v64200gr-8-c2 pc100-222-622r one bank 512 mb reg. dimm 256 mbit (x4) hys 72v128220gr-8-c2 pc100-222-622r two bank 1 gbyte reg. dimm 256 mbit (x4 stacked)
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 3 9.01 *) note : to confirm to this specification, motherboards must pull this pin to high state or no connect. pin definitions and functions a0 - a11, a12 address inputs dqmb0 - dqmb7 data mask ba0, ba1 bank selects cs0 - cs3 chip select dq0 - dq63 data input/output rege *) register enable ? h ? or n.c = registered mode ? l ? = buffered mode cb0 - cb7 check bits (x72 organization only) v dd power (+ 3.3 v) ras row address strobe v ss ground cas column address strobe scl clock for presence detect we read/write input sda serial data out cke0 clock enable n.c. no connection clk0 - clk3 clock input ?? address format density organization memory banks sdrams # of sdrams # of row/bank/ columns bits refreshperiodinterval 64 mb 8m 72 1 8m 8 9 12/2/9 4k 64 ms 15.6 s 128 mb 16m 72 1 16m 4 18 12/2/10 4k 64 ms 15.6 s 128 mb 16m 72 1 16m x 8 9 12/2/10 4k 64 ms 15.6 s 256 mb 32m 72 1 32m 4 18 12/2/11 4k 64 ms 15.6 s 256 mb 32m 72 1 32m 8 9 13/2/10 8k 64 ms 7.8 s 512 mb 64m 72 1 64m 4 18 13/2/11 8k 64 ms 7.8 s 1gb 128m 72 2 64m 4 36 13/2/11 8k 64 ms 7.8 s pin configuration pin# symbol pin# symbol pin# symbol pin# symbol 1 v ss 43 v ss 85 v ss 127 v ss 2 dq0 44 du 86 dq32 128 cke0 3dq1 45cs2 87 dq33 129 cs3 4 dq2 46 dqmb2 88 dq34 130 dqmb6 5 dq3 47 dqmb3 89 dq35 131 dqmb7 6 v dd 48 du 90 v dd 132 n.c. 7dq4 49 v dd 91 dq36 133 v dd 8 dq5 50 n.c. 92 dq37 134 n.c. 9 dq6 51 n.c. 93 dq38 135 n.c.
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 4 9.01 10 dq7 52 cb2 94 dq39 136 cb6 11 dq8 53 cb3 95 dq40 137 cb7 12 v ss 54 v ss 96 v ss 138 v ss 13dq9 55dq16 97dq41 139dq48 14 dq10 56 dq17 98 dq42 140 dq49 15 dq11 57 dq18 99 dq43 141 dq50 16 dq12 58 dq19 100 dq44 142 dq51 17 dq13 59 v dd 101 dq45 143 v dd 18 v dd 60 dq20 102 v dd 144 dq52 19 dq14 61 n.c. 103 dq46 145 n.c. 20 dq15 62 du 104 dq47 146 du 21 cb0 63 n.c. 105 cb4 147 rege 22 cb1 64 v ss 106 cb5 148 v ss 23 v ss 65 dq21 107 v ss 149 dq53 24 n.c. 66 dq22 108 n.c. 150 dq54 25 n.c. 67 dq23 109 n.c. 151 dq55 26 v dd 68 v ss 110 v dd 152 v ss 27 we 69 dq24 111 cas 153 dq56 28 dqmb0 70 dq25 112 dqmb4 154 dq57 29 dqmb1 71 dq26 113 dqmb5 155 dq58 30 cs0 72 dq27 114 cs1 156 dq59 31 du 73 v dd 115 ras 157 v dd 32 v ss 74 dq28 116 v ss 158 dq60 33 a0 75 dq29 117 a1 159 dq61 34 a2 76 dq30 118 a3 160 dq62 35 a4 77 dq31 119 a5 161 dq63 36 a6 78 v ss 120 a7 162 v ss 37 a8 79 clk2 121 a9 163 clk3 38 a10 (ap) 80 n.c. 122 ba0 164 n.c. 39 ba1 81 wp 123 a11 165 sa0 40 v dd 82 sda 124 v dd 166 sa1 41 v dd 83 scl 125 clk1 167 sa2 42 clk0 84 v dd 126 a12 168 v dd pin configuration (cont ? d) pin# symbol pin# symbol pin# symbol pin# symbol
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 5 9.01 block diagram: one bank 8m x 72, 16m x 72 & 32m x 72 sdram dimm modules hys 72v8200gr, hys72v16201gr and hys 72v32200gr using x8 organized sdrams spb04130-2 dq0-dq7 cs d0 dq0-dq7 rdqmb0 rcs0 dq0-dq7 cs d4 dq32-dq39 clk0 12 pf pll sdrams d0-d8 clk1, clk2, clk3 12 pf register cs0/cs2 dqmb0-7 ba0, ba1 a0-a11,12* ) ras cas cke0 we rcs0/rcs2 rdqmb0-7 rba0, rba1 ra0-11,12 rras rcas rcke0 rwe rege 10 k ? sdrams d0-d8 sdrams d0-d8 sdrams d0-d8 sdrams d0-d8 sdrams d0-d8 sdrams d0-d8 sa0 sda sa0 sa1 sa1 sa2 sa2 scl scl wp 47 k ? e 2 prom (256 word x 8 bit) v cc v ss c d0-d8, reg., dll d0-d8, reg., dll notes: 1) dq wirding may differ from that decribed in this drawing; however dq/dqb relationship must be maintained as shown 2) all resistors are 10 ? unless otherwise noted * ) a12 is only for 32 m x 72 organisation v cc dqm rdqmb4 dqm dq0-dq7 cs d1 dq8-dq15 rdqmb1 dq0-dq7 cs d5 dq40-dq47 dqm rdqmb5 dqm dq0-dq7 cs d8 dqm we dq0-dq7 cs d2 dq16-dq23 rdqmb2 rcs2 dq0-dq7 cs d6 dq48-dq55 dqm rdqmb4 dqm dq0-dq7 cs d3 dq24-dq31 rdqmb3 dq0-dq7 cs d7 dq56-dq63 dqm rdqmb7 dqm cb7 cb0-
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 6 9.01 block diagram: one bank 16m x 72 & 64m x 72 sdram dimm modules hys 72v16200gr, hys72v32201 and hys 72v64200gr using x4 organized sdrams 1) dq wirding may differ from that decribed in this drawing; however dq/dqb relationship must be maintained as shown 2) all resistors are 10 ? unless otherwise noted spb04131 dqm dq0-dq3 d0 dqm dq0-dq3 d1 dqm dq0-dq3 d2 dqm dq0-dq3 d3 dqm dq0-dq3 d16 dq0-dq3 dq4-dq7 rdqmb1 dq8-dq11 dq12-dq15 cb0-cb3 rdqmb0 rcs0 dqm dq0-dq3 d8 dqm dq0-dq3 d9 dqm dq0-dq3 d10 dqm dq0-dq3 d11 dqm dq0-dq3 d17 dq32-dq35 dq36-dq39 rdqmb5 dq40-dq43 dq44-dq47 cb4-cb7 rdqmb4 dqm dq0-dq3 d4 dqm dq0-dq3 d5 dqm dq0-dq3 d6 dqm dq0-dq3 d7 dq16-dq19 dq20-dq23 rdqmb3 dq24-dq27 dq28-dq31 rdqmb2 rcs2 dqm dq0-dq3 d12 dqm dq0-dq3 d13 dqm dq0-dq3 d14 dqm dq0-dq3 d15 dq48-dq51 dq52-dq55 rdqmb7 dq56-dq59 dq60-dq63 rdqmb6 clk0 12 pf pll sdrams d0-d17 clk1, clk2, clk3 12 pf register cs0/cs2 dqmb0-7 ba0, ba1 a0-a11, a12* ) ras cas cke0 we rcs0/rcs2 rdqmb0-7 rba0, rba1 ra0-ra11 rras rcas rcke0 rwe rege 10 k ? sdrams d0-d17 sdrams d0-d17 sdrams d0-d17 sdrams d0-d17 sdrams d0-d17 sdrams d0-d17 sa0 sda sa0 sa1 sa1 sa2 sa2 scl scl wp 47 k ? e 2 prom (256 word x 8 bit) v cc v ss c d0-d17, reg., dll d0-d17, reg., dll v cc * ) a12 is only used for 128 m x 72 organisation cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 7 9.01 block diagram: two bank 128m x 72 sdram dimm modules hys 72v128220gr using stacked x4 organized sdrams spb04132 dqm dq0-dq3 d0 dqm dq0-dq3 d0 dqm dq0-dq3 d1 dqm dq0-dq3 d1 dqm dq0-dq3 d2 dqm dq0-dq3 d2 dqm dq0-dq3 d3 dqm dq0-dq3 d3 dqm dq0-dq3 d16 dqm dq0-dq3 d16 dq0-dq3 dq4-dq7 rdqmb1 dq8-dq11 dq12-dq15 cb0-cb3 rdqmb0 rcs1 rcs0 dqm dq0-dq3 d8 dqm dq0-dq3 d8 dqm dq0-dq3 d9 dqm dq0-dq3 d9 dqm dq0-dq3 d10 dqm dq0-dq3 d10 dqm dq0-dq3 d11 dqm dq0-dq3 d11 dqm dq0-dq3 d17 dqm dq0-dq3 d17 dq32-dq35 dq36-dq39 rdqmb5 dq40-dq43 dq44-dq47 cb4-cb7 rdqmb4 dqm dq0-dq3 d4 dqm dq0-dq3 d4 dqm dq0-dq3 d5 dqm dq0-dq3 d5 dqm dq0-dq3 d6 dqm dq0-dq3 d6 dqm dq0-dq3 d7 dqm dq0-dq3 d7 dq16-dq19 dq20-dq23 rdqmb3 dq24-dq27 dq28-dq31 rdqmb2 rcs3 rcs2 dqm dq0-dq3 d12 dqm dq0-dq3 d12 dqm dq0-dq3 d13 dqm dq0-dq3 d13 dqm dq0-dq3 d14 dqm dq0-dq3 d14 dqm dq0-dq3 d15 dqm dq0-dq3 d15 dq48-dq51 dq52-dq55 rdqmb7 dq56-dq59 dq61-dq63 rdqmb6 clk0 12 pf pll stacked sdrams d0-d17 clk1, clk2, clk3 12 pf register cs0-cs3 dqmb0-7 ba0, ba1 a0-a11, a12* ) ras cas cke0 we rcs0-rcs3 rdqmb0-7 rba0, rba1 ra0-ra11 rras rcas rcke0 rwe rege 10 k ? stacked sdrams d0-d17 stacked sdrams d0-d17 stacked sdrams d0-d17 stacked sdrams d0-d17 stacked sdrams d0-d17 stacked sdrams d0-d17 * ) a12 is only used for 128 m x 72 organisation sa0 sda sa0 sa1 sa1 sa2 sa2 scl scl wp e 2 prom (256 word x 8 bit) v cc v ss c d0-d17, reg. dll d0-d17, reg. dll 1.) dq wirding may differ from that decribed in this drawing; however dq/dqb relationship must be maintained as shown 2.) all resistors are 10 ? unless otherwise noted v cc 47 k ? cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs cs
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 8 9.01 absolute maximum ratings dc characteristics t a = 0 to 70 c 1) ; v ss =0v; v dd =3.3v 0.3 v capacitance t a = 0 to 70 c 1) ; v dd =3.3v 0.3 v, f =1mhz parameter symbol limit values unit min. max. input / output voltage relative to v ss v in, v out ? 1.0 4.6 v power supply voltage on v dd v dd ? 1.0 4.6 v storage temperature range t stg -55 +150 o c power dissipation (per sdram component) p d ? 1w data out current (short circuit) i os ? 50 ma permanent device damage may occur if ? absolute maximum ratings ? are exceeded. functional operation should be restricted to recommended operation conditions. exposure to higher than recommended voltage for extended periods of time affect device reliability parameter symbol limit values unit min. max. input high voltage v ih 2.0 v dd +0.3 v input low voltage v il ? 0.5 0.8 v output high voltage ( i out = ? 4.0 ma) v oh 2.4 ? v output low voltage ( i out =4.0 ma) v ol ? 0.4 v input leakage current, any input (0 v < v in < 3.6 v, all other inputs = 0 v) i i(l) ? 10 10 a output leakage current (dq is disabled, 0 v < v out < v dd ) i o(l) ? 10 10 a parameter symbol limit values unit one bank modules two bank modules input capacitance (all inputs except clk and cke) c in 10 20 pf input capacitance (clk) c clk 30 30 pf input capacitance (cke) c cke 17 30 pf input/output capacitance (dq0 - dq63, cb0 - cb7) c io 10 17 pf input capacitance (scl, sa0 - 2) c sc 88pf input/output capacitance (sda) c sd 88pf
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 9 9.01 operating currents per sdram component t a = 0 to 70 c 1) , v dd =3.3v 0.3 v (recommended operating conditions unless otherwise noted) parameter test condition symbol 64mb 128mb 256mb unit note max. max. max. operating current t rc = t rc(min.) , t ck = t ck(min.) outputs open, burst length = 4, cl = 3. all banks operated in random access, all banks operated in ping- pong manner to maximize gapless data access ? i cc1 110 150 170 ma 2) precharge stand-by current in power down mode cs = v ih(min.) , cke v il(max.) t ck =min. i cc2p 21.52ma 2) no operating current t ck = min., cs = v ih(min.) , active state (max. 4 banks) cke v ih(min.) i cc3n 45 45 45 ma 2) cke v il(max.) i cc3p 8 1010ma 2) burst operating current t ck =min., read command cycling ? i cc4 70 90 100 ma 2), 3) auto refresh current t ck =min., auto refresh command cycling ? i cc5 130 210 220 ma 2) self refresh current self refresh mode, cke = 0.2 v ? i cc6 11.53ma 2)
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 10 9.01 ac characteristics (sdram device specification) 4), 5) t a = 0 to 70 c 1) ; v ss =0v; v dd =3.3v 0.3 v, t t =1ns parameter symbol limit values unit note -8 pc100-222 min. max. clock and access times clock cycle time cas latency = 3 cas latency = 2 t ck 10 10 ? ? ns ns ? clock frequency cas latency = 3 cas latency = 2 f ck ? ? 100 100 mhz mhz ? access time from clock cas latency = 3 cas latency = 2 t ac ? ? 6 6 ns ns ? clock high pulse width t ch 3 ? ns ? clock low pulse width t cl 3 ? ns ? transition time t t 0.5 10 ns ? setup and hold parameters input setup time t is 2 ? ns ? input hold time t ih 1 ? ns ? power down mode entry time t sb ? 1clk ? power down mode exit setup time t pde 1 ? clk ? mode register set-up time t rsc 2 ? clk ? transition time t t 0.5 10 ns ? common parameters row to column delay time t rcd 20 ? ns ? row precharge time t rp 20 ? ns ? row active time t ras 45 100k ns ? row cycle time t rc 70 ? ns ? activate (a) to activate (b) command period t rrd 2 ? clk ? cas (a) to cas (b) command period t ccd 1 ? clk ?
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 11 9.01 refresh cycle refresh period t ref ? 64 ms ? self refresh exit time t srex 1 ? clk 6) read cycle data out hold time t oh 3 ? ns ? data out to low impedance t lz 0 ? ns 7) data out to high impedance t hz 38ns 7) dqm data out disable latency t dqz ? 2clk ? write cycle data input to precharge (write recovery) t wr 2 ? clk ? dqm write mask latency t dqw 0 ? clk ? ac characteristics (sdram device specification) (cont ? d) 4), 5) t a = 0 to 70 c 1) ; v ss =0v; v dd =3.3v 0.3 v, t t =1ns parameter symbol limit values unit note -8 pc100-222 min. max.
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 12 9.01 clock frequency and latency (registered dimm module specification) 8) parameter symbol -8 unit notes clock frequency max. t ck 100 mhz ? clock cycle time min. t ck 10 ns ? cas latency min. t aa 3clk 9) ras to cas delay min. t rcd 2clk ? ras latency min. t rl 6clk 9) precharge time min. t rp 2clk ? data in to precharge min. t dpl 2clk ? data in to active/refresh min. t dal 5clk ? bank to bank delay time min. t rrd 2clk ? cas to cas delay time min. t ccd 1clk ? write latency fixed t wl 1clk 9) dqm write mask latency fixed t dqw 1clk ? dqm data disable latency fixed t dqz 1clk ? clock suspend latency fixed t csl 1clk 9)
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 13 9.01 notes 1. the registered dimm modules are designed to operate under system operating conditions between 0-55 deg c ambient, maximum sustained bandwidth and 0 lfm airflow. operating at higher ambient temperatures needs sufficient air flow to limit the case temperature of the sdram components do not exceed 85 o c. 2. these parameters depend on the cycle rate. all values are measured at 100 mhz operation frequency. input signals are changed once during tck excepts for icc6 and for standby currents when tck = infinity. 3. these parameters are measured with continous data stream during read access and all dq toggling. cl=3 and bl=4 is assumed and the data-out current is excluded. 4. an initial pause of 100 s is required after power-up. then a precharge all banks command must be given followed by eight auto refresh (cbr) cycles before the mode register set operation can begin. also the on-dimm pll must be given enough clock cycles to stabilize before any operation can be guaranteed. 5. ac timing tests have v il = 0.8 v and v ih = 2.0 v with the timing referenced to the 1.4 v crossover point. the transition time is measured between v ih and v il . all ac measurements assume t t = 1 ns with the ac output load circuit shown. specified t ac and t oh parameters are measured with a 50 pf only, without any resistive termination and with a input signal of 1 v/ns edge rate between 0.8 v and 2.0 v. 6. self refresh exit is a synchronous operation and begins on the second positive clock edge after cke returns high. self refresh exit is not complete until a time period equal to t rc is satisfied after the self refresh exit command is registered. 7. referenced to the time at which the output achieves the open circuit condition, not to output voltage levels. 8. due to the usage of a register device on all input and address signals, all external command cycle are delayed by one clock (reg-dimm latency = 1) on the module board. 9. delayed by one clock cycle due to the use of the register device. serial presence detect a serial presence detect storage device - e 2 prom 34c02 - is assembled onto the module. information about the module configuration, speed, etc. is written into the e 2 prom device during module production using a serial presence detect protocol (i 2 c synchronous 2-wire bus) 50 pf i/o measurement conditions for t ac and t oh clock 2.4 v 0.4 v input is t t t output 1.4 v t lz ac t t ac oh t hz t 1.4 v cl t ch t ih t 1.4 v io.vsd
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 14 9.01 spd-table for -8 registered dimm modules byte# description spd entry value hex 64 mb 1 bank -8 128 mb 1 bank -8 1) 128 mb 1 bank -8 2) 256 mb 1 bank-8 *) 256 mb 1 bank-8 **) 512 mb 1 bank -8 1gb 2 banks -8 0 number of spd bytes 128 80 1 total bytes in serial pd 256 08 2 memory type sdram 04 3 number of row addresses (without bs bits) 12/13 0c0c0c0c0d0d0d 4 number of column addresses 9/10/11 090a0a0b0a0b0b 5 number of dimm banks 1 01 01 01 01 01 01 02 6 module data width 72 48 7 module data width (cont ? d) 000 8 module interface levels lvttl 01 9 cycle time at cl = 3 10.0 ns a0 10 access time from clock at cl = 3 6.0 ns 60 11 dimm config (error det/ corr.) ecc 02 12 refresh rate/type self-refresh, 15.6/7.8 s 80 80 80 80 82 82 82 13 sdram width, primary x4, x8 08 04 08 04 08 04 04 14 error checking sdram data width n/a/x4 08 04 08 04 08 04 04 15 minimum t ccd 1 clk 01 16 burst length supported 1, 2, 4, 8 & (full page) 8f 8f 0f 0f 0f 0f 0f 17 number of sdram banks 404 18 sdram supported cas latencies 2 & 3 06 19 sdram cs latencies 0 01 20 sdram we latencies 0 01 21 sdram dimm module attributes with pll 16 22 sdram device attributes v dd tol +/ ? 10% 0e
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 15 9.01 1) hys72v16200gr-8, 2) hys72v16201gr-8, *) hys72v32201gr, **) hys72v32200gr 23 min. clock cycle time at cl = 2 10 ns a0 24 max. data access time from clock for cl = 2 6ns 60 25 min. clock cycle time at cl = 1 not supp. ff 26 max. data access time from clock at cl = 1 not supp. ff 27 sdram minimum t rp 20 ns 14 28 sdram minimum t rrd 16 ns 10 29 sdram minimum t rcd 20 ns 14 30 sdram minimum t ras 45 ns 2d 31 module bank density (per bank) 64/128/256/ 512 mbyte 10 20 20 40 40 80 80 32 sdram input setup time 2ns 20 33 sdram input hold time 1 ns 10 34 sdram data input setup time 2ns 20 35 sdram data input hold time 1ns 10 36-61 superset information (may be used in future) ? ff 62 spd revision 1.2 12 63 checksum for bytes 0 - 62 ? 08 11 99 b2 bc f5 f6 64-125 manufacturer ? s information ? xx 126 frequency specification 100 mhz 64 127 details of clocks ? 8f 128+ unused storage locations ? ff spd-table for -8 registered dimm modules (cont ? d) byte# description spd entry value hex 64 mb 1 bank -8 128 mb 1 bank -8 1) 128 mb 1 bank -8 2) 256 mb 1 bank-8 *) 256 mb 1 bank-8 **) 512 mb 1 bank -8 1gb 2 banks -8
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 16 9.01 package outlines module package jedec mo-161 64, 128 &256 mbyte registered module based on x8 organised sdrams note: all tolerances are in accordance with the jedec standard 133.35 10 11 3 6.35 6.35 41 40 42.18 84 127.35 3 1.27 0.1 85 94 95 124 125 168 2 17.78 3.125 0.1 4 4 max. 43.18 detail of contacts 2.55 1 +0.5 1.27 1 1.27 66.68 0.25 pll register register l-dim-168-45
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 17 9.01 module package jedec mo-161 128, 256 & 512 mbyte registered module based on x4 organised sdrams note: all tolerances are in accordance with the jedec standard 133.35 10 11 3 6.35 6.35 41 40 42.18 84 127.35 3 1.27 0.1 85 94 95 124 125 168 2 17.78 3.125 0.1 4 4 max. 43.18 detail of contacts 2.55 1 +0.5 1.27 1 1.27 66.68 0.25 pll register register l-dim-168-46
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 18 9.01 module package jedec mo-161 1 gbyte registered dimm module with stacked sdrams note: all tolerances are in accordance with the jedec standard 133.35 10 11 3 6.35 6.35 41 40 42.18 84 127.35 3 1.27 0.1 85 94 95 124 125 168 2 17.78 3.125 0.1 4 6.8 max. 43.18 detail of contacts 2.55 1 +0.5 1.27 1 1.27 66.68 0.25 pll register l-dim-168-47 register register
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 19 9.01 functional description all 168-pin registered dimms conform to a compatible set of timing and operation characteristics intended to comply with the 100 mhz standards. the registered dimms achieve high speed data transfer rate up to 100 mhz, when in ? registered mode ? . the ? registered mode ? is achieved when the rege input signal is in ? high ? state or the pin is not connected. operation in ? buffered mode ? (rege = ? low ? ) needs careful system design to compensate all input signals for the extra delay time of the register components when in ? buffered mode ? . ? buffered mode ? is limited to 66 mhz operation and is beyond the scope of this datasheet. all infineon pc100 registered dimm modules are not tested for ? buffered mode ? operation. registered mode: all control and address signals are synchronized with the positive edge of externally supplied clocks and are registered on-dimm and hence delayed by one clock cycle in arriving at the sdram devices. the use of the on-board register reduces the capacitive loading of the dimm on input control and address signals. the sdram device data lines (dq) are connected directly to the dimm tabs through 10 ohm series resistors. all the following timing diagrams and explanations show dimm operation at the tabs, not sdram operation. the picture below depicts an overview of the effect of the registered mode on the data outputs (dqs) for a read operation. without the registers, the data is delayed according to the device cas latency, in the case two clocks. with the register, the data is delayed according to the device cas latency plus an additional clock cycle. this is known as the dimm cas latency, and in this example is four three. the data path can be thought of as a pipeline in which the register effectively lengthens the pipe by one clock cycle. in case of a burst write command the data-in is delayed one clock due the op-dimm pipeline register also. therefore, data for the first burst write cycle must be applied on the dq pins on the next clock cycle after the write command is issued. the remaining data inputs must be supplied on spt03968 clk read a t0 t1 t2 t3 t4 t5 t6 command dout a0 dout a1 dout a2 dout a3 nop nop nop nop nop cas latency = 2 , dq ? s ck2 t registered dimm burst read operation (bl = 4) device nop dout a1 dout a0 dout a2 dout a3 cas latency = 3 dimm , dq ? s ck3 t one clock added for on-dimm pipeline register reg-dimm latency = 1
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 20 9.01 each subsequent rising clock edge until the burst length is completed. when the burst has finished, any additional data supplied to the dq pins will be ignored. registered dimm burst write operation (bl = 4) dq ? s the first data element and the write are registered on the next clock edge reg-dimm latency = 1 clk din a0 din a1 extra data is ignored after termination of a burst. don ? t care din a2 din a3 spt03969 t8 nop clk command nop t0 write a t1 nop t2 nop t3 t6 nop t4 nop t5 t7 nop nop
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 21 9.01
hys 72vx2xxgr pc100 registered sdram-modules infineon technologies 22 9.01 rev. changes 12.98 byte 12 changed from 80h (15.6 s) to 82h (7.8 s), checksum byte 63 aju- sted, comment added to page 2 ? will change to rev 1.2 in future ? 12.98 byte 16 changed from 8fh to 0fh (no full page support for 256m based modu- les). spec reference changed to intel rev. 1.2 2.98 values for discrete capacitors on clk0 inputs changed to 12pf according to intel rev.1.2 specification, ioh & iol changed to 4ma 2.98 compliance code changed from 620r to 622r accroding to intels rev. 1.2 specification 18.4.1999 -8a speed sort added for 256m based modules -8b speed sort removed for 64m based modules infineon logo added spd updated according to new speedsort for 256m devices 12.5.99 some icc currents changed due to new inputs and measurements 16.6.99 input capacitance changed according to new measurements 13.8.99 input capacitance changed according to new measurements with flexframe stacked components 2.9.99 typoo on page 2, 64mx72 to 128mx72 corrected 3.9.99 changed to data book version from r&l 1 gbyte module thickness 4 to 8 mm changes, (masked) 28.9.99 cl 2 frequency changed to 66 mhz for -8a parts 19.10.99 typoo in input capacitance corrected (input stacked from 10 to 20 pf) 30.11.99 notes renumbered, note 1) added, explaining maximum operation tempera- ture for registered dimm modules 14.12.99 hys72v32220gr (64m stacked removed), hys72v32201gr added -8b version removed 10.1.2000 hys72v16201gr version added 7.3.2000 check-sum for hys72v32201gr-8 corrected from ba to b2 28.3.2000 byte 127 for -8a modules stays at 8f for 256mbit s20 (rev.a) byte 127 for -8a modules changed to 8d for 256mbit s19&s17 (rev.b and c) for compliance with existing (vl02) and future (vl03) testprograms 4.12.2000 thickness of 1 gbyte module changed from 8 mm (jedec value) to 6.4 mm typ. (actual values) 18.1.2001 clarification of ? buffered mode ? operation 15.02.2001 outline drawings changed to l-dim-168-45,46 & 47 5.03.2001 -8a speed sort removed 6.06.2001 typo in spb04130 corrected (new :spb04130-2) 06.09.2001 scr: thickness of modules with stacked components changed from 6.4 to 6.8 max.

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